t4 - lds - 0098, rev . 3 (1 20177 ) ?201 2 microsemi corporation page 1 of 7 jans_ 2n3019 and jans_ 2n3019s radiation hardened low power npn silicon transistor qualified per mil - prf - 19500/391 qualified levels : jansm, jansd, jansp, jansl, and jansr description this rha level 2n3019 and 2n3019s npn leaded metal device is rad hard qualified for high - reliabilit y applications. microsemi also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both throug h - hole and surface - mount packages. to - 39 (to - 205ad) and to - 5 package also availabl e in : to - 46 (to - 206ab) (leaded) jans_2 n3057a to - 18 (to - 206aa) (leaded) jans_2 n3700 ub package (leaded) jans_2 n3700ub important: for the latest information, visit our website http://www.microsemi.com . features ? jedec registered 2n3019. ? rha level jan qualific ation s per mil - prf - 19500/ 391 (see part nomenclature for all options ). applications / benefits ? leaded to - 39 and to - 5 package . ? lightweight. ? low power. ? military and other high - reliability applications. maximum ratings @ t a = +25 o c unless otherwise noted msc C law rence 6 lake street, lawrence, ma 01841 tel: 1- 800 - 446 - 1158 or (978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com p arameters/test conditions symbol value unit junction and storage temp erature t j and t stg - 65 to +200 o c thermal resistance junction - to - ambient r ? ja 195 o c /w thermal resistance junction - to - case r ? jc 30 o c /w collector - emitter voltage v ceo 80 v collector - base voltage v cbo 140 v emitter - base voltage v ebo 7.0 v collector current i c 1.0 a total power dissipation: @ t a = +25 o c (1) @ t c = +25 o c (2) p d 0.8 5.0 w notes : 1. derate linearly 4.6 mw/ c for t a +25 c . 2. derate linearly 28.6 mw/c for t c +25 c . downloaded from: http:///
t4 - lds - 0098, rev . 3 (1 20177 ) ?201 2 microsemi corporation page 2 of 7 jans_ 2n3019 and jans_ 2n3019s mechanical and packaging ? case: hermetically sealed, k ovar base, n ickel cap. ? terminals: gold plate, s older d ip (sn63/pb37) a vailable upon request. ? marking: part number, d ate c ode, m anufacturers id and serial number. ? polarity: npn . ? weight: approximately 1.064 grams. ? see p ackage d imensions on last page. part nomenclature jan sm 2n 30 19 s reliability level jansm = 3k rads (si) jansd = 10 k rads (si) jans p = 3 0 k rads (si) jans l = 50 k rads (si) jans r = 100 k rads (si) package type s = to - 39 non - s (b lank ) = to -5 jedec type number symbols & definitions symbol definition f f requency i b base current (dc) i e emitter current (dc) t a ambient temperature t c case temperature v cb collector to base voltage (dc) v ce collector to emitter voltage (dc) v eb emitter to base voltage (dc) downloaded from: http:///
t4 - lds - 0098, rev . 3 (1 20177 ) ?201 2 microsemi corporation page 3 of 7 jans_ 2n3019 and jans_ 2n3019s electrical characteristics @ t a = +25 c, unless otherwise noted parameters / test conditions symbol min. max. unit off charactertics collector - emitter breakdown current i c = 30 ma v (br)ceo 80 v collector - base cutoff current v cb = 140 v i cbo 10 a emitter - base cutoff current v eb = 7 v i ebo1 10 a collector - emitter cutoff current v ce = 90 v i ces 10 a emitter - base cutoff current v eb = 5.0 v i ebo2 10 a on charactertics forward - current transfer ratio i c = 150 ma, v ce = 10 v i c = 0.1 ma, v ce = 10 v i c = 10 ma, v ce = 10 v i c = 500 ma, v ce = 10 v i c = 1.0 a, v ce = 10 v h fe 100 50 90 50 15 300 300 300 collector - emitter saturation voltage i c = 150 ma, i b = 15 ma i c = 500 ma, i b = 50 ma v ce(sat) 0.2 0.5 v base - emitter saturation voltage i c = 150 ma, i b = 15 ma v be(sat) 1.1 v dynamic characteristics parameters / test conditions symbol min. max. unit small - signal short - circuit forward current transfer ratio i c = 1.0 ma, v ce = 5.0 v, f = 1.0 khz h fe 80 400 magnitude of small - signal short - circuit forwa rd current transfer ratio |h fe | i c = 50 ma, v ce = 10 v, f = 20 mhz 5.0 20 output capacitance c obo pf v cb = 10 v, i e = 0, 100 khz f 1.0 mhz 12 input capacitance c ibo pf v eb = 0.5 v, i c = 0, 100 khz f 1.0 mhz 60 downloaded from: http:///
t4 - lds - 0098, rev . 3 (1 20177 ) ?201 2 microsemi corporation page 4 of 7 jans_ 2n3019 and jans_ 2n3019s electrical characteristics @ t a = +25 c, unless otherwise noted (continued) safe operation area (see soa graph below and mil - std - 750, method 3053 ) dc tests t c = 25 c, 1 cycle, t = 10 ms test 1 2n3019, 2n3019s v ce = 10 v i c = 500 ma test 2 2n3019, 2n3019s v ce = 40 v i c = 125 ma test 3 2n3019, 2n3019s v ce = 80 v i c = 60 ma (1) pulse test: pulse width = 300 s, d uty c ycle 2.0% v ce C collector C emitter voltage C v maximum safe operating area i c C collector current - a downloaded from: http:///
t4 - lds - 0098, rev . 3 (1 20177 ) ?201 2 microsemi corporation page 5 of 7 jans_ 2n3019 and jans_ 2n3019s electrical characteristics @ t a = +25 c, unless otherwise noted (continued) post radiation electrical characteristics parameters / test conditions symbol min. max. uni t collector to base cutoff current i cbo 20 a v cb = 140 v emitter to base cutoff current i ebo 20 a v eb = 7 v collector to emitter breakdown voltage v (br)ceo 80 v i c = 30 ma collector - emitter cutoff current i ces 20 a v ce = 90 v emitter - base cutoff current i ebo 20 a v eb = 5.0 v forward - current transfer ratio (2) [h fe ] i c = 150 ma , v ce = 10 v i c = 0.1 ma, v ce = 10 v i c = 10 ma, v ce = 10 v i c = 500 ma, v ce = 10 v i c = 1 a, v ce = 10 v [50] [25] [45] [25] [7.5] 300 300 300 collector - emitter saturation voltage v ce(sat) v i c = 150 ma, i b = 15 ma i c = 500 ma, i b = 50 ma 0.23 0.58 base - emitter saturation voltage v be(sat) v i c = 150 ma, i b = 15 ma 1.27 (2) see method 1019 of mil - std - 750 for how to de termine [h fe ] by first calculating the delta (1/h fe ) from the pre - and post - radiation h fe . notice the [h fe ] is not the same as h fe and cannot be measured directly. the [h fe ] value can never exceed the pre - radiation minimum h fe that it is based upon. downloaded from: http:///
t4 - lds - 0098, rev . 3 (1 20177 ) ?201 2 microsemi corporation page 6 of 7 jans_ 2n3019 and jans_ 2n3019s grap hs t a ( o c) ambient figure 1 temperature C power derating (r ? ja ) t c ( o c) case at base figure 2 temperature C power derating (r ? jc ) maximum dc operation rating (w) maximum dc operation rating (w) downloaded from: http:///
t4 - lds - 0098, rev . 3 (1 20177 ) ?201 2 microsemi corporation page 7 of 7 jans_ 2n3019 and jans_ 2n3019s package dimensions notes: 1. dimension are in inches. 2. millimeters are given for general information only. 3. beyond r (radius) maximum, tw shall be held for a minimum length of .011 (0.28 mm ). 4. dimension tl measured from maximum hd. 5. body contour optional within zone defined by hd, cd, and q. 6. leads at gauge plane .054 +.001 - .000 inch (1.37 +0.03 -0 .00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (tp) at maximum material condition (mmc) relative to tab at mm c. the device may be measured by direct methods. 7. dimension lu applies between l 1 and l 2 . dimension ld applies between l 2 and minimum. diameter is uncontrolled in l 1 and beyond ll minimum. 8. all three leads. 9. the collector shall be internally connected to the case. 10. dimension r (radius) applies to both inside corners of tab. 11. in accordance with asme y14.5m, diameters are equivalent to x symbology. 12. for "s" suffix devices, dimension ll is 0.500 (12.70 mm) minimum, 0.750 (19.05 mm) m aximum. 13 . lead 1 = emitter, lead 2 = base, lead 3 = collector. 14. to - 39, dim ll is 0.50" - 0.75" ; to - 5, dim ll is 1.500" - 1.750" dimensions symbol inches millimeters notes min max min max cd .305 .335 7.75 8.51 ch .240 .260 6.10 6.60 hd .335 .370 8.51 9.40 lc .200 tp 5.08 tp 6 ld .016 .021 0.41 0.53 7, 8 ll .500 .750 12.70 19.05 7, 8, 12 lu .016 .019 0.41 0.48 7, 8 l 1 .050 1.27 7, 8 l 2 .250 6.35 7, 8 q .050 1.27 5 tl .029 .045 0.74 1.14 4 tw .028 .034 0.71 0.86 3 r .010 0.25 10 45 tp 45 tp 6 p .100 2.54 downloaded from: http:///
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